SURFACE AND INTERFACE SCIENCE



Permanents : Bernard GRUZZA, Luc BIDEUX, Christine ROBERT-GOUMET, Vladimir MATOLIN

PhD Students : Yamina OULD-METIDJI, Matthieu PETIT, David BACA




RESEARCH
PARTNERS
III-N / III-V
EPES
IMFP
LECTURES


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The research group has been working in surface physics and related submicroscopic phenomena for 20 years. Electron spectroscopies and quantitative analysis are fields of interest. Results from Auger electron (AES) or photoelectron (ESCA) spectroscopies are generally interpreted using layered model of the substrates. This method can be used in many cases particularly for binary compounds or alloys.

Regarding to surface and bulk plasmons electron energy losses spectroscopy (EELS) is a fruitful technique for surface analysis.

A new method of investigation, namely elastic peak electron spectroscopy (EPES) has been successfully applied. It is correlated to Monte-Carlo simulation of electron paths in the samples. We have determined values of Inelastic Mean Free Path of electrons (IMFP) in substrates at various energies.

Regarding to surface and bulk plasmons electron energy losses spectroscopy (EELS) is a fruitful technique for surface analysis.

 

In this UHV system, AES, EELS, EPES spectroscopies can be performed with an hemispherical electronenergy analyser and multiple gun positions. A twin X-rays sourceAl/Mg is used for ESCA analysis.
In the preparation chamber, the substrates are cleaned and heterostructures are elaborated using evaporation cells andatomic nitrogen plasma source.

 

 


 

In this second UHV chamber, a retarding fieldspectrometer allows us to get AES and EPES measurements. There are three cells for Sb, Au or Al2O3 atomic condensations on substrates. A glow discharge source is used for nitridation of surfaces.
Samples can be cleaned with ionic bombardment or heated up to 800C.



 
A special ultra high vacuum chamber for angular electron spectroscopies. A rotating small hemispherical analyser is used, sample can have different orientations relatively to the impinging electron beam.
 
 
 
The current research themes of our team are as follows: 
 
Our Expression of Interest for the 6th Framework European Programme !!
 
ELABORATION of INTERFACES based on NITRIDE SEMICONDUCTORSTECHNOLOGY and IMPLEMENTATION byNANOSCIENCES 
 
Acronym: EINSTEIN
 
Abstract : 
 
The proposal addresses improvement and elaboration of high-quality ultra-thin overlayers of III-V nitrides (GaN, InN..) on III-V semiconductor substrates such as InP and GaAs and on Si for integraded optoelectronics. It deals with surface and interface physics and related phenomena in III-V semiconductors. Multifu nctionality (optoelectronics, photonics, electronics,..) of III-nitride ultrathin and nanostructured layers will be exploited for heterostructures based on n i trided semiconductors films of high technological interest for quantum effects devices, gas sensors and other ones with nanometer sizes. Using different synthetic strategies (UHV set-up, MOCVD reactors, ion-beam and plasma assisted methodologies) and adva n ced characterization techniques, improvement of fundamental knowledge of structures at the nanoscale and development of innovative processes and devices will be key points of the programme which requires an interdisciplinary approach involving physicists, chemists and material scientists.
 
 
Coordinateur : B.GRUZZA
 
 
 
First participants :
Bernard GRUZZA
LAboratory of Material Sciences for Electronic and Automatic,France
UHV surface and interface studies by quantitative electron spectroscopies (ESCA, AES, EPES, EELS).
Sources of atomic nitrogen, aluminium oxide and metal evaporation cells for in-situ elaboration of heterostructures.
Electrical measurements : testing microelectronics devices and gas sensors.
Maria LOSURDO 
Institute of Inorganic Methodologies and of Plasmas, Italy
Formation of ultrathin III-V n itrided layers by conventional MOCVD and by innovative plasma assisted methodologies.
Development of non destructive optical and structural characterisations for surfaces and interfaces
Development of innovative processes for III-V nitride structures.
Thomas CHASSE
Institute for Surface Modification, Germany
Thin nitride film preparation techniques:
(i) Low-energy ion beam nitridation
(ii) Low-energy ion beam assisted deposition
Characterisation methods:
- in-situ: LEED/AES, XPS, RHEED, ellipsometry, (synchrotron radiation based spectroscopy)
- ex-situ : x-ray reflectometry, AFM.
Vladimir MATOLIN
Department of Electronics and Vacuum Physics, Czech Republic
Development of vacuum systems for thin film growth by means of molecular beam epitaxy under UHV and reactive plasma conditions.
Investigation of surface and interface properties by XPS, XPD, RHEED, LEED, AES, SIMS, TDS and SRPES.
Study of gas-surface interaction on sensors and catalysts.
Jacek SZUBER
Department of Microelectronics Silesian University of Technology, Poland
Contactless and non-destructive characterisation of surfaces and interfaces.
Methods: Surface Photovoltage Spectroscopy, Photoluminescence, Cathodoluminescence combined with rigorous computer analysis.
Development of advanced software for modelling and assessment of surface electronic parameters.
Zineb BENAMARA
Applied Micro Electronic Laboratory, Algeria
I(V) G(V) and C(V) measurements at different frequencies versus temperature. DLTS measurements. Four point probes resistivity measurements.
Surface photoelectric voltage measurements under laser illumination.
Transport phenomena modelling in optical and electronical devices.
 
 
 
Our last E.U. Copernicus Programme (1997-2001): 
 
Different programmes :
PICS :
 Study of different stages of the III-V nitridation in ultravacuum, for opto and micro electronic devices elaboration -Surface analysis and electrical caracterisations (starting 2001)
 Elaboration and caracterisation of III-V nitridated thin films for gas sensors elaboration (proposed 2002)
POLONIUM :
 Caracterisation of thin films composites for sensor applications (2002-2004)
CMEP :
 Utilisation des semi-conducteurs III-V dans les dispositifs electroniques, caracterisation et modelisation (1997-2002)
Find in the following our list of published papers and conference communications:
 
  • publications (23k) (updated 2002/06/07)
  • communications (20k) (updated 2002/06/07)
     
    • Others scientific cooperations with:
  • The microelectronic laboratory of the Monastir University (Tunisia)
  • The microelectronic laboratory of the Sidi Bel Abbes University (Algeria) 
  • The ATOMKI Institute of the Hungarian Academy of Sciences (Hungary)
    Other sites:
     
  • The Surface Science Links 
     
  • Surface-Science 
     
  • An Introduction To Surfaces Chemist ry 
     
  • Surface Science:lectures of Pr Venables 
     
  • Lecture in Surface Science 
     
  • Physics of Thin Films Science 
     
  •  Introduction to Surface Analysis Science 
     
  •  Auger Electron Spectrometry Theory Tutorial Science 
     
  •  LaSurface
     
  •  Analytical techniques 
     
  • Surfaces and Contact Mechanics
     
  • Tutorials in Surface Science 

     

     Pr. B. GRUZZA 




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